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2010 Summer Meeting

2011 AAPT Summer Meeting
July 30-August 3, 2011
Omaha, Nebraska

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Electron Mobility in Silicon: Surprising Facts and Temperature Dependence Determination
  Location: SS 105
  Date: Tuesday, Aug.2
  Time: 2:15 PM -2:25 PM
  Author: A. James Mallmann, Milwaukee School of Engineering
  Co-Author(s): None
  Abstract: The mobilities of the current-carrying free charges in transistors influence switching speeds, the operating temperatures, and the rate of battery drain for laptop computers and other portable electronic devices. After a brief discussion of the scattering of electrons by lattice vibrations, I will describe a simple, inexpensive experiment to determine how the mobility of free electrons in lightly doped n-type silicon depends on temperature.
  Footnotes: None
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