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Location:
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SS 105 |
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Date:
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Tuesday, Aug.2 |
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Time:
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2:15 PM -2:25 PM
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Author:
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A. James Mallmann, Milwaukee School of Engineering
414-277-7317, mallmann@msoe.edu
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Co-Author(s):
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None
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Abstract:
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The mobilities of the current-carrying free charges in transistors influence switching speeds, the operating temperatures, and the rate of battery drain for laptop computers and other portable electronic devices. After a brief discussion of the scattering of electrons by lattice vibrations, I will describe a simple, inexpensive experiment to determine how the mobility of free electrons in lightly doped n-type silicon depends on temperature.
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Footnotes:
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None
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